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may 200 2 200 2 fairchild semiconductor corporation FDZ2554P rev. c ( w ) f dz255 4 p dual p -channel 2.5v specified powertrench bga mosfet general description combining fairchild ?s advanced 2.5v specified powertrench process with state - of - the - art bga packaging, the FDZ2554P minimizes both pcb space and r d s ( o n) . this dual bga mosfet embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra- low profile packaging, low gate charge, and low r ds( on) . applications battery management load switch battery protection features ? 6.5 a, ? 20 v . r ds(on) = 28 m w @ v gs = ? 4.5 v r ds(on) = 45 m w @ v gs = ? 2.5 v occupies only 0.10 cm 2 of pcb area : 1/3 the area of so-8 ultra-thin package: less than 0. 70 mm height when mounted to pcb outstanding thermal transfer characteristics: significantly better than so-8 ultra-low q g x r ds(on) figure-of-merit high power and current handling capability q 2 q 1 p i n 1 g s d d s s s d s s s s g s s d d d bottom p i n 1 f 2 5 5 4 top s s g g d q1 q2 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage ? 20 v v gss gate-source voltage 12 v i d drain current ? continuous (note 1a) ? 6.5 a ? pulsed ? 20 p d power dissipation (steady state) (note 1a) 2.1 w t j , t stg operating and storage junction temperature range ? 55 to + 150 c thermal characteristics r q ja thermal resistance, junction-to-ambient (note 1a) 60 c/w r q ja thermal resistance, junction-to-ambient (note 1 b ) 108 c/w r q jc thermal resistance, junction-to-case (note 1) 8 c/w package marking and ordering information device marking device reel size tape width quantity 255 4 p FDZ2554P 7?? 12mm 3000 units FDZ2554P
fdz255 4 p rev c (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = ?250 m a ?20 v d bv dss d t j breakdown voltage temperature coefficient i d = ?250 m a, referenced to 25 c ? 1 3 mv/ c i dss zero gate voltage drain current v ds = ?16 v, v gs = 0 v ?1 m a i gss gate?body leakage v gs = 12 v, v ds = 0 v 100 na on characteristics (note 2) v gs( th ) gate threshold voltage v ds = v gs , i d = ?250 m a ?0. 6 ? 0 . 8 ?1.5 v d v gs( th) d t j gate threshold voltage temperature coefficient i d = ?250 m a, referenced to 25 c 3 mv/ c r ds(on) static drain?source on?resistance v gs = ?4.5 v, i d = ? 6.5 a v gs = ?2.5 v, i d = ? 5 a v gs = ?4.5 v, i d = ? 6.5 a , t j =125 c 2 1 3 6 30 28 45 4 3 m w i d(on) on?state drain current v gs = ?4.5 v, v ds = ?5 v ?20 a g fs forward transconductance v ds = ?5 v, i d = ? 6.5 a 2 4 s dynamic characteristics c iss input capacitance 1430 pf c oss output capacitance 319 pf c rss reverse transfer capacitance v ds = ? 10 v, v gs = 0 v, f = 1.0 mhz 164 pf r g gate resistance v gs = 15 mv, f = 1.0 mhz 9.2 w switching characteristics (note 2) t d(on) turn?on delay time 12 22 ns t r turn?on rise time 9 18 ns t d(off) turn?off delay time 62 100 ns t f turn?off fall time v dd = ? 10 v, i d = ? 1 a, v gs = ? 4.5 v, r gen = 6 w 37 60 ns q g total gate charge 14 20 nc q gs gate?source charge 3 nc q gd gate?drain charge v ds = ? 10 v, i d = ? 6.5 a, v gs = ? 4.5 v 4 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current ? 1.75 a v sd drain?source diode forward voltage v gs = 0 v, i s = ? 1.75 a (note 2) ? 0 .7 ?1.2 v t rr reverse recovery time 25 ns q rr reverse recovery charge i f = ? 6.5 a, d if / d t = 100 a/s 20 nc notes: 1. r q ja is determined with the device mounted on a 1 in2 2 oz. copper pad on a 1.5 x 1.5 in. board of fr-4 material. the thermal resistance from the junction to the circuit board side of the solder ball, r q jb , is defined for reference. for r q jc , the thermal reference point for the case is defined as the top surface of the copper chip carrier. r q jc and r q jb are guaranteed by design while r q ja is determined by the user's board design. a) 60c/w when mounted on a 1in 2 pad of 2 oz copper b) 108c/w when mounted on a minimum pad of 2 oz copper scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 m s, duty cycle < 2.0% FDZ2554P
fdz255 4 p rev c (w) dimensional outline and pad layout notes: unless othewise specified a) all dimensions are in millimeters. f e d c b a 3 1 2 3 b a 1 d c e f 2 2.50 4.00 0.25 0.76 0.51 seating plane 0.65 3.25 ? 0.30 0.65 1.30 0.65 1.30 3.25 0.65 top view side view front view bottom view recommended land pattern index slot (hidden) index slot solder ball, ? 0.25 gate 1 gate 2 l c l c c l solder ball, ? 0.25 c l f2554 date / vendor code d d d d d d s1 s1 s1 s1 s1 s2 s2 s2 s2 s2 s1 = source 1 s2 = source 2 d = drain FDZ2554P FDZ2554P
fdz255 4 p rev c (w) typical characteristics 0 5 10 15 20 0 0.5 1 1.5 2 -v ds , drain-source voltage (v) -i d , drain current (a) -3.0v -3.5v -2.5v -2.0v v gs = - 4.5v 0.8 1 1.2 1.4 1.6 1.8 0 5 10 15 20 -i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = -2.5v -4.0v -3.5v -4.5v -3.0v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. 0.8 0.9 1 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = -6.5a v gs = -4.5v 0.01 0.03 0.05 0.07 0.09 1.5 2 2.5 3 3.5 4 4.5 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = -3.2a t a = 125 o c t a = 25 o c figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. 0 5 10 15 20 0.5 1 1.5 2 2.5 -v gs , gate to source voltage (v) -i d , drain current (a) t a = 125 o c 25 o c -55 o c v ds = -5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. FDZ2554P
fdz255 4 p rev c (w) typical characteristics 0 1 2 3 4 5 0 4 8 12 16 q g , gate charge (nc) -v gs , gate-source voltage (v) i d = -6.5a v ds = -5v -15v -10v 0 400 800 1200 1600 2000 0 5 10 15 20 -v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-source voltage (v) -i d , drain current (a) dc 1s 100ms r ds(on) limit v gs = -4.5v single pulse r q ja = 108 o c/w t a = 25 o c 10ms 1ms 10s 0 10 20 30 40 50 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r q ja = 108c/w t a = 25c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r q ja (t) = r(t) * r q ja r q ja = 108 c/w t j - t a = p * r q ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1 b . transient thermal response will change depending on the circuit board design. FDZ2554P

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